Toshiba Launches Silicon Carbide MOSFET Solutions for Electric Vehicle Applications
Toshiba Develops Innovative SiC MOSFET with Enhanced Performance and Reliability
BonChip Electronics, a leading distributor of Toshiba products, is excited to announce the groundbreaking development of a new Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with an embedded Schottky Barrier Diode (SBD). This innovative design offers significant improvements over existing SiC MOSFET technology, delivering lower on-resistance and enhanced short-circuit ruggedness while maintaining exceptional reliability.
Revolutionizing Power Semiconductor Technology
Power semiconductors play a critical role in modern electronics, enabling efficient energy conversion and control across various applications. Their role is crucial in achieving carbon neutrality goals, particularly in the realms of vehicle electrification and miniaturization of industrial equipment. SiC MOSFETs have emerged as the next generation of power semiconductors due to their superior efficiency compared to traditional Silicon (Si) MOSFETs. However, a key challenge with existing SiC MOSFETs has been a rise in on-resistance (RonA) during reverse conduction operation, impacting overall performance.
Toshiba's Breakthrough: An SBD-Embedded SiC MOSFET with Uncompromised Performance
Toshiba's novel design addresses the limitations of existing SiC MOSFETs by introducing an SBD-embedded structure with a strategically designed barrier profile:
- Dual-Barrier Structure: This innovative design incorporates a barrier structure with varying depths. The deeper sections effectively suppress excess current flow from the MOSFET during short-circuit operation and minimize SBD current leakage, enhancing short-circuit durability. Shallower sections within the barrier structure allow for efficient current flow from the SBD, ensuring reliable reverse conduction operation.
- Reduced On-Resistance: This optimized design achieves a significant 26% reduction in on-resistance (RonA) compared to current SiC MOSFET structures, translating to improved power conversion efficiency.
Enhanced Durability and Reliability
By combining these advancements, Toshiba's new SiC MOSFET offers the following benefits:
- Improved Short-Circuit Ruggedness: The dual-barrier structure effectively mitigates excess current flow during short-circuit events, enhancing the device's overall durability.
- Maintained Reverse Conduction Reliability: The strategically designed shallow barrier sections ensure reliable reverse conduction operation, a critical function of the integrated SBD.
Early Customer Engagement and Future Developments
Toshiba has been providing test samples of these new SiC MOSFETs with embedded SBDs to select customers since December 2023 for evaluation purposes. This collaborative approach allows for further refinement and optimization of the technology.
Technical Details and Recognition
- The developed prototype is a 1.2 kV class SBD-integrated MOSFET.
- It achieves a low RonA of 2.0 mΩcm2, a 26% improvement over existing designs.
- This breakthrough technology was presented at the prestigious 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2024 held in Bremen, Germany.
Contact BonChip Electronics today to learn more about Toshiba's innovative SiC MOSFET technology and how it can empower your next-generation power electronics application.
