Alpha & Omega Semiconductor Unveils New 40V Dual N-Channel MOSFET Designed for USB PD 3.1 Implementations
Alpha & Omega Semiconductor Unveils AONZ66412 XSPairFET MOSFET for High-Power USB PD 3.1 Applications
Alpha and Omega Semiconductor Limited (AOS), a leading innovator in power electronics, announces the AONZ66412 XSPairFET MOSFET. This highly efficient MOSFET is specifically designed for buck-boost converters used in USB Power Delivery (PD) 3.1 Extended Power Range (EPR) applications, supporting the new USB-C standard that delivers up to 240W of power.
Optimizing Power Delivery for Next-Gen USB-C
The AONZ66412 is engineered to excel in the commonly used power range of up to 140W at 28V. It integrates two 40V N-Channel MOSFETs in a half-bridge configuration within a compact and symmetrical 5mm x 6mm XSPairFET package. This innovative design offers several key advantages:
- Reduced Board Space and Simplified Layout: The AONZ66412 replaces two individual DFN5x6 MOSFETs, significantly reducing the required printed circuit board (PCB) area. It streamlines the layout process for the 4-switch buck-boost architecture, allowing engineers to create more compact and efficient power delivery solutions.
- Enhanced Efficiency: The AONZ66412 is optimized for high efficiency, making it ideal for applications demanding maximum power delivery with minimal energy loss.
Ideal for Type-C USB 3.1 EPR Applications
These features make the AONZ66412 the perfect choice for a wide range of Type-C USB 3.1 EPR applications, including:
- Laptops: Enabling slimmer and lighter laptops with high-powered performance.
- USB Hubs: Supporting the growing need for multi-device charging with high power output.
- Power Banks: Delivering faster charging capabilities for power-hungry devices.
Advanced Technological Features
The AONZ66412 incorporates cutting-edge technologies to deliver superior performance:
- Latest Bottom Source Packaging: Minimizes parasitic inductance for reduced switching noise.
- Integrated High-Side and Low-Side MOSFETs: Simplifies design and reduces component count.
- Low On-Resistance (3.8 milliohms): Improves efficiency and minimizes power loss.
- Large Paddle for Improved Thermal Performance: Allows for efficient heat dissipation through connection to the PCB ground plane.
- 1MHz Operation: Enables the use of smaller and lighter inductors, further reducing board space requirements.
Proven Efficiency for Demanding Applications
Rigorous testing has demonstrated that the AONZ66412 achieves a remarkable 97% efficiency at 1MHz under typical USB PD 3.1 EPR conditions (28V input, 17.6V output, and 8A load). This exceptional performance makes it a reliable and efficient solution for high-power USB applications.
A Commitment to Innovation
“The AONZ66412 exemplifies AOS' dedication to developing cutting-edge solutions for the evolving power electronics landscape,” stated Rack Tsai, Marketing Director of the MOSFET product line at AOS. “This innovative MOSFET addresses the specific needs of USB PD 3.1 EPR applications, enabling designers to create high-density, high-efficiency power delivery systems for next-generation USB-C devices.”
BonChip Electronics - Your Authorized Distributor for AOS AONZ66412 XSPairFET MOSFETs
As an authorized distributor for Alpha and Omega Semiconductor, BonChip Electronics is your one-stop shop for the AONZ66412 XSPairFET MOSFET. We offer the complete line of AOS power electronics products, ensuring you have access to the latest technological advancements. Our commitment to exceptional service and fast delivery guarantees a smooth and efficient purchasing experience.
Contact BonChip Electronics today to discuss your AONZ66412 requirements and explore how we can empower your next high-power USB PD 3.1 design!
